Structural and optical characteristics of silicon nanowires fabricated by wet chemical etching

Publication year: 2011
Source: Chemical Physics Letters, In Press, Accepted Manuscript, Available online 13 June 2011

Meiguang, Zhu , Xuejiao, Chen , Zhiliang, Wang , Yun, Chen , Dianfei, Ma , …

Array-ordered silicon nanowires (SiNWs) were fabricated directly on p-Si substrate by wet chemical etching. The as-prepared SiNWs apparently were composed of a single-crystalline Si core embedded in an amorphous SiO2 shell (∼5nm). Raman spectra indicated that the surface of as-prepared SiNWs contained a collection of smaller Si crystalline nanograins. The characteristic peaks induced by Si nanograins were observed in the Raman and photoluminescence (PL) spectra due to the quantum confinement effect. The study revealed that the array-ordered SiNWs would have a great potential of application in nanoscale electric and optoelectronic devices by controlling the fabrication processes.

Graphical abstract

 Graphical abstract: The investigation of Raman and photoluminescence spectra illustrated that quantum confinement effect induced by the Si nanograins can be observed in SiNWs. The structure of the manuscript is as below. Highlights: ► The large-scaled SiNWs were fabricated using a wet chemical etching method. ► Silicon nanowires characterization was investigated. ► The PL mechanism of SiNWs was investigated by the rapid thermal annealing. ► A blue shift of the emission peak originally located at 525 nm was observed.